Salicide field effect transistors with improved borderless contact structures and a method of fabrication

ABSTRACT

A process for making improved borderless contact structure to salicide field effect transistors (FETs) has been achieved. Salicide FETs are formed on device areas surrounded by a shallow trench isolation (STI) using a first rapid thermal anneal (RTA-1) to form a metal silicide on the source/drain contacts and the gate electrodes, and a second rapid thermal anneal (RTA-2) is delayed until after forming a borderless contact opening structures to the source/drain areas of the FETs. An etch stop (Si3N4) layer and an interlevel dielectric (ILD) layer is deposited, and borderless contact openings, extending over the STI, are etched in the ILD and etch stop layers to the source/drain areas. The contact openings across the substrate must be over-etched to insure that all contacts are open. This results in over-etched region in the STI at the source/drain-STI interface that result in source/drain-to-substrate shorts when metal plugs are formed in the contact openings.

BACKGROUND OF THE INVENTION

(1) Field of the Invention

The present invention relates to the fabrication of integrated circuitdevices on semiconductor substrates, and more particularly relates to amethod for making an improved borderless contacts integrated withsalicide field effect transistors. The method utilizes a contact implantand a delayed second rapid thermal anneal (RTA-2) to make a new contactstructure having lower source/drain-to-substrate leakage currents andthereby higher product yields than the prior art borderless contactstructures.

(2) Description of the Prior Art

As the semiconductor industry moves to smaller device feature sizes forultra large scale integration (ULSI), the circuit performance isexpected to improve. To achieve these smaller feature sizes it isnecessary to use self-aligned techniques, such as self-aligned silicide(SALICIDE) processes for making field effect transistors (FETs). Tofurther increase circuit density it is also necessary to etch contactopenings that extend over the edges of underlying contact areas,commonly referred to as borderless contacts. One structure onsemiconductor integrated circuits where borderless contacts are ofparticular importance for increasing circuit density is the contacts tothe shallow diffused source/drain areas of the salicide FET.

Unfortunately when making salicide FETs with borderless contacts tosource/drain areas several processing problems arise that result inelectrical shorts and there-fore degrade the product yield. To betterunderstand the problem associated with making these borderless contactsa schematic cross section view of a conventional Salicide FET device inand on a device area is shown for the prior art in FIG. 1. Theseconventional Salicide FETs are formed on a semiconductor substrate 10,composed of a single crystal silicon (Si). Field oxide 12 regions areformed first in and on the substrate 10 surface to electrically isolatedevice areas. The preferred isolation for current high density circuitsis a shallow trench isolation (STI) 12. The detailed process steps arenot shown for making the STI, but consist of forming a pad oxide anddepositing a silicon nitride hard mask layer. The silicon nitride(Si₃N₄) layer is patterned to leave portions over the device areas andshallow trenches 2 are etched in the substrate between the device areas.The trenches are then filled by chemical vapor deposited with aninsulating material, such as silicon oxide (SiO₂). The CVD-SiO₂ isetched or chemical-mechanically polished back to the hard mask to formthe STI 12. The hard mask and pad oxide, which is not shown in FIG. 1,are then selectively removed, for example using a hot phosphoric acidetch to remove the Si₃N₄ followed by a buffered hydrofluoric acid (BHF)to remove the pad oxide A gate oxide 14 is formed on the device areasand conductively doped polysilicon layer is deposited and patterned byanisotropic plasma etching to form the FET gate electrode 16. Next, afirst ion implantation is carried out to form lightly doped source/drainregion 17 in the device areas adjacent to the FET gate electrode. Aconformal insulating, such as a chemical vapor deposited (CVD) siliconoxide (SiO₂) layer, is deposited and anisotropically plasma etched backto form sidewall spacers 18. A second ion implantation is then carriedout to form low resistant diffused source/drain contact areas 19 in andon the silicon substrate. After removing any native oxide that may havegrown on the polysilicon gate electrode 16 and the silicon source/draincontact areas 19 a refractory metal, such as Titanium (Ti) is deposited.The substrate 10 is then subjected to a first rapid thermal anneal toform a Titanium silicide (TiSi_(x)) 22 on the exposed polysilicon gateelectrode 16 and on the source/drain contact areas 19. The unreacted Tion the oxide surfaces (e.g. spacers 18, STI 12) using a wet etchingsolution. A second RTA is then carried out to complete the TiSi₂ phasetransition. The second RTA converts the TiSi_(x) to a stable TiSi₂ layerhaving low sheet resistance. When cobalt (Co) is used the second RTAconverts the CoSi_(x) to a stable CoSi₂ silicide layer also having a lowsheet resistance. The two-step process is commonly used rather than asingle-step to avoid rapid diffusion of the Si atoms in the metal (Ti orCo) layer that would result in bridging across the sidewall spacers andbetween the source/drain areas and polysilicon gate electrodes. Next, arelatively thin conformal etch-stop/barrier layer 24 is deposited, suchas a silicon nitride (Si₃N₄) or a silicon oxynitride (SiON) layer. Arelatively thick interlevel dielectric (ILD) layer 28, for example, aCVD-SiO₂ and/or a doped glass, such as a borophosphosilicate glass(BPSG), is deposited to electrically insulated the FETs on the siliconsubstrate 10 from the next level of integration. Now, as commonlypracticed in the industry, a photoresist mask and an aniso-tropic plasmaetch are used to etch borderless contact openings 2 in the ILD layer 28to the diffused source/drain contact areas 19. Because of thenonuniformity in the ILD layer 28 across the substrate and thenonuniformities in the etch rate for etching the contact openings 2across the substrate, it is necessary to overetch the contact openings 2to insure that the multitude of contacts openings formed are allcompletely opened. Unfortunately, when these borderless contact openings2 are etched that extend over the STI 12, the STI is over etched in theregion X at the STI-silicon substrate interface. When the over etchedregion X extends below the shallow diffused junction x_(j) for either Nor P doped source/drain contacts 19 and the silicon substrate 10 areelectrically shorted and the circuits fail.

Numerous methods for making improved Salicide FETs, and borderlesscontacts have been reported in the literature. In U.S. Pat. No.5,858,846 to Tsai et al. a method for making salicide FETs is describein which arsenic ions are implanted in a titanium (Ti) metal layer priorto annealing to inhibit Si diffusion in Ti and eliminate bridgingbetween the source/drain and gate electrode. In U.S. Pat. No. 5,744,395to Shue et al., a Ti layer is deposited at an elevated temperature toform a silicide which is removed in a wet etch and then requires only asingle RTA. In U.S. Pat. No. 5,702,972 to Tsai et al., a double spacermethod is described in which the second spacer is removed after thesilicide is formed. In U.S. Pat. No. 5,899,742 to Sun, a method isdescribed for making aligned local inter-connections and contactssimultaneously to FETs. The method is compatible with salicide FETs, buthe does not address the overetch problem. In U.S. Pat. No. 5,840,624 toJang et al. a method is described for etching borderless contacts onmultilevel metal layers without overetching, but does not addressetching contacts to shallow diffused junction adjacent to STI. Thereforethere is still a need in the industry to provide salicide FET structureswith better borderless contacts to the source/drain contacts whenshallow trench isolation (STI) is used for advance circuit structures.

SUMMARY OF THE INVENTION

A principal object of this invention is to provide a process andstructure for making salicide field effect transistors (FETs) withimproved borderless contacts to the source/drain contact areas forincreased product (device) yield.

It is another object of this invention to achieve these improvedborderless contacts by ion implanting a contact dopant in the contactopenings after a first rapid thermal anneal (RTA) and prior to a secondRTA used to form the salicide FETS. This implant results in a modifiedsource/drain contact diffused junction profile in the silicon substrateunder and adjacent to any unintentionally overetched field oxide (STI)regions at the STI-substrate interface, thereby reducingsource/drain-to-substrate electrical shorts.

It is still another object of the invention to provide an improvedborderless contact structure without increasing the thermal budget(temperature x time) while providing a simple and cost effectivemanufacturing process.

In accordance with the present invention, a method is described formaking salicide field effect transistors (FETs) with improved borderlesscontacts structures on the source/drain areas of the FETs. The novelmethod utilizes a contact dopant implanted in the borderless contactopenings after the first rapid thermal anneal (RTA-1) and before thesecond RTA (RTA-2) used to make the Salicide FET. The implanted dopantis of the same polarity as the doped source/drain contact areas of theFET. This implant forms a modified diffused junction in the siliconsubstrate around any over-etch STI at the STI-source/drain interfacesand prevents source/drain-to-substrate electrical shorts when conductingplugs are later formed in the borderless contact openings. The method isdescribed for N-channel salicide FETs on a P⁻ doped substrate, but themethod equally applies to making P-channel FETs by reversing thepolarities of the dopants. Further by forming P and N-doped wells in thesubstrate and using appropriate ion implant block-out masks bothP-channel and N-channel salicide FETs can be made on the same substratewith these improved borderless contacts. The method is suitable formaking CMOS logic circuits that includes embedded memory (Em)/logicapplications, such as Em-SRAMs and Em-DRAMs.

The method consist of providing a semiconductor substrate doped with afirst conductive type dopant. The substrate typically is single crystalsilicon and is doped with P-type dopant, such as boron (B). A shallowtrench isolation (STI) field oxide (FOX) areas is formed in and on thesubstrate and surrounds and electrically isolates device areas on thesubstrate. A thin gate oxide is formed on the device areas usually bygrowing a silicon oxide (SiO₂) layer by thermal oxidation. Aconductively doped polysilicon layer is formed by depositing apolysilicon which is doped with an N-type conductive dopant. The N dopedpolysilicon layer is patterned to include gate electrodes over deviceareas. Next lightly doped source/drain areas are formed in the deviceareas adjacent to said gate electrodes by ion implantation, using asecond conductive type dopant (N-dopant), such as arsenic ions (As⁷⁵) orphosphorus (P³¹). Insulating sidewall spacers are formed on thesidewalls of the gate electrodes by depositing a conformal silicon oxidelayer by chemical vapor deposition (CVD) and anisotropically plasmaetching back the CVD-SiO₂. During the etch back, the top surface of thepolysilicon gate electrodes and the source/drain contact areas areexposed. Next, optional, heavily doped source/drain contact areas areformed in the device areas adjacent to the sidewall spacers by ionimplanting a the second conductive type dopant, such as As or P. Theself-aligned silicide (SALICIDE) FETs are formed next by depositing arelatively thin conformal metal layer, such as titanium (Ti) or cobalt(Co), on the substrate over the gate electrodes and the device areas; Afirst thermal anneal, preferably a rapid thermal anneal (RTA-1) iscarried out to selectively form a silicide layer (TiSi_(x) or a CoSix)on the top surface of the gate electrodes and on the source/source/draincontact areas. The unreacted metal layer on the oxide sidewall spacerand other oxide surfaces (e.g. STI) is then removed by selectively wetetching. Next, a conformal etch stop/barrier layer, composed of Si₃N₄ orsilicon oxynitride (SiON), is deposited by CVD. An interlevel dielectric(ILD) layer, for example composed of CVD-SiO₂ is deposited over the etchstop layer and provides electrical insulation for the next level ofelectrical interconnection. The ILD layer is typically planarized. Next,borderless contact openings are etched in the ILD layer to thesource/drain areas. These borderless contact openings extend over thefield oxide. Typically, because of the nonuniformity of the ILD layerand the nonuniformity etch rate across the substrate it is necessary toover etch to insure that all contacts openings are open across thesubstrate. Unfortunately, this results in over etching the field oxideregions (STI) at the field oxide-source/drain area interface and resultsin source/drain-to-substrate shorts when conducting plugs, such as metalplugs, are subsequently formed in the contact openings. Now, by themethod of this invention, a contact dopant is ion implanted in thesubstrate under and adjacent to the over-etched field oxide regions inthe borderless contact openings. The second thermal anneal, preferably asecond RTA (RTA-2), is performed to complete the phase transition of themetal silicide (to reduces sheet resistance) and concurrently to activethe ion implanted contact dopant to form source/drain contact areas thatare continuous around the over-etched field oxide regions. This modifieddiffused metallurgical junction reduces the electrical shorts whenconducting plugs are later formed in the borderless contact openings.Since the contact implant is integrated into the salicide FET processthe thermal budget for the process is not increased, which is essentialfor future shallow junction devices.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiment of this invention is best under-stood with reference tothe following drawings.

FIG. 1 shows a prior art cross-sectional schematic view of aconventional salicide FET that illustrate the unavoidable over-etchproblem in a borderless contact openings.

FIGS. 2-5 show a schematic cross-sectional view through a salicide FETfor the sequence of process step for making the improved salicide FETswith the modified border-less contact openings.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Referring now to FIGS. 1 through 4, the preferred embodiment is shownfor making salicide field effect transistors (FETs) with improvedborderless contacts to the source/drain contact areas of the FETs. Theprocess in described in detail for making only N-channel salicide FETson a P⁻ doped silicon substrate, but it should be well understood bythose skilled in the art that P-channel salicide FETs can also befabricated by reversing the conductive polarity of the dopant. It shouldalso be understood that by including both N doped and P doped wellregions in the substrate, and by including additional selective ionimplant steps, that both N-channel and P-channel FETs having theseimproved borderless contacts can be fabricated simultaneously on thesame substrate. This allows one to fabricate CMOS circuits and alsoembedded memory devices such as Em-SRAM and Em-DRAM.

Referring to FIG. 2, The method begins by providing a semiconductorsubstrate 10. The substrate 10 is typically a P⁻ doped single crystalsilicon having a crystallographic axis of <100>. A Field OXide (FOX) 12is formed in the silicon substrate 10 surrounding and electricallyisolating device areas in which the salicide FETs are formed. For veryhigh density circuits the preferred FOX is a shallow trench isolation(STI). The method of forming the STI is briefly described and consist offorming a relatively thin stress release oxide (pad oxide) and a siliconnitride (Si₃N₄) layer on the substrate surface as an oxidation-resistantmask (the pad oxide and nitride layers are not shown in FIG. 2).Conventional photolithographic techniques and plasma etching are use toetch openings in the oxide/nitride layer and shallow trenches are etchedin the substrate while retaining the Si₃N₄ layer over the device areas.An insulating layer, such a chemical vapor deposited (CVD) silicon oxide(SiO₂), is deposited on the substrate and chemically mechanicallypolished (CMP) back to the silicon nitride layer to form the STI 12.After removing the Si₃N₄ layer and pad oxide, the STI is essentiallycoplanar with the substrate surface, as shown in FIG. 2. The STI istypically between about 2500 and 4500 Angstroms thick.

Continuing with FIG. 21 A gate oxide 14 is formed on the device areas.Typically the gate oxide is formed by performing a dry thermal oxidationin an oxidation furnace using oxygen as the ambient gas. The gate oxide14 is grown to a thickness of between about 48 and 50 Angstroms. Next ablanket polysilicon layer 16 is deposited on the substrate and over thegate oxide layer 14 and the field oxide areas 12. Preferably polysiliconlayer 16 is deposited by low pressure chemical vapor deposition (LPCVD)using a reactant gas such as silane (SiH₄). The thickness of layer 16 isbetween about 1000 and 3000 Angstroms. Layer 16 is then conductivelydoped N⁻type by ion implanting arsenic (As⁷⁵) or phosphorus (P³¹).Alternatively the polysilicon can be doped in situ by adding a dopantgas, such as arsine (AsH₃) or phosphine (PH₃) during the LPCVDdeposition. The final dopant concentration of layer 16 afterimplantations or after in situ doping is preferred between about 1.0 E18 and 1.0 E 21 ions/cm³. Conventional photolithographic techniques andanisotropic plasma etching are used to pattern the polysilicon layer 16which includes forming gate electrodes over the device areas.Polysilicon layer is plasma etched using reactive ion etching (RIE) orhigh density plasma (HDP) etching and an etchant gas, such as chlorine(Cl₂).

After removing the photoresist mask, for example by plasma ashing inoxygen (O₂), lightly doped source/drain (LDD) areas 17 are formed in thedevice areas adjacent to said gate electrodes 16 by ion implantation,using a second conductive type dopant, such as As or P. Typically theLDD areas are doped to a concentration of between about 1.0 E 16 and 1.0E 18 atoms/cm³. Next, a conformal insulating layer 18 is deposited andanisotropically plasma etched back to form sidewall spacers 18 on thesidewalls of the gate electrodes 16. Typically layer 18 is silicon oxide(SiO₂) and is deposited by low pressure CVD (LPCVD) usingtetraethosiloxane (TEOS) as the reactant gas, and is deposited to apreferred thickness of about 1000 and 3000 Angstroms. The etch back iscarried out using RIE and an etchant gas such as carbon tetrafluoride(CF₄) and hydrogen H₂ or methylfluoride (CHF₃), which etches the SiO₂layer 18 selectively to the silicon substrate 10 and polysilicon gateelectrode 16. Heavily doped source/drain contact areas 19 are thenformed in the device areas adjacent to the insulating sidewall spacers18 by ion implanting a second conductive type dopant, such as arsenic,The contact areas 19 are doped to a final concentration of 1.0 E 18 and1.0 E 21 atoms/cm³. Any residual native oxide remaining on thesource/drain contact areas 19 and the exposed top surface of thepolysilicon gate electrodes 16 is removed using a dip etch in a dilutehydrofluoric acid solution. A conformal metal layer is deposited on thesubstrate. The metal is preferably titanium (Ti) or cobalt (Co) and isdeposited to a thickness of between about 40 and 400 Angstroms. Forexample, the Ti or Co can be deposited by physical sputter deposition.Alternatively, the Ti can be deposited by CVD using TiCl₄ as thereactant gas, The substrate is subjected to a first rapid thermal anneal(RTA-1) to selectively form a metal silicide layer 22 on the polysilicongate 16 and the source/drain contact areas 19, as depicted in FIG. 2.The RTA-1 is preferably carried out in a nitrogen ambient at atemperature of between about 600 and 750° C. and for a time of betweenabout 10 and 50 seconds for titanium. For cobalt the RTA-1 is carriedout at a temperature of between about 400 and 600° C. and for a time ofbetween about 10 and 50 seconds for cobalt. This anneal is sufficient toform a silicide in a metastable phase, (commonly referred to as the C49phase) but short enough to prevent electrical shorts between thesource/drain and gate electrode due to the rapid diffusion of siliconatoms in the Ti layer on the sidewall spacer 18 prior to removing theunreacted Ti or Co.

Still referring to FIG. 2, the unreacted metal on the insulatingsidewall spacers 18 and elsewhere on insulating surfaces of thesubstrate, such as on the STI areas 12 is removed using a wet etch. Theunreacted metal Ti or Co are removed a solution of NH₄OH:H₂O₂:H₂O whilethe TiSi_(x) or CoSi_(x) remains on the source/drain contact 19 and gateelectrodes 16, thereby forming the salicide FET.

After removing the unreacted metal it is common practice in the industryto carry out a second rapid thermal anneal (RTA-2) to convert theTiSi_(x) or CoSi_(x) to a second phase, commonly referred to as the C54phase, to reduce the sheet resistance of the silicide. However, a keyfeature of this invention is to delay the RTA-2 until after performing acontact opening ion implant at a later process step.

Continuing with FIG. 3, a conformal etch stop layer 24 is deposited. Theetch stop layer is preferably silicon nitride (Si₃N₄) and is depositedby LPCVD using SiCl₂H₂ and NH₃ as the reactant gases and is deposited ata temperature of between 650 and 750° C. Alternatively the Si₃N₄ can bedeposited by plasma enhanced CVD (PECVD) at a temperature of betweenabout 200 and 350° C. The Si₃N₄ layer 24 is deposited to a preferredthickness of between about 100 and 500 Angstroms. Next, an interleveldielectric (ILD) layer 28 is deposited to electrically insulate thedevices (FET's) on the substrate and minimize the interlevelcapacitance. The ILD layer 28 is typically silicon oxide and isdeposited by LPCVD using TEOS or TEOS/ozone as the reactant gases.Alternatively, other ILD materials can be used, such a doped glass orlow dielectric insulators. The ILD layer 28 is formed to a preferredthickness of between about 4000 and 10000 Angstroms over the FETs. Forvery high density circuits ILD layer 28 is usually planarized, forexample by chemical mechanical polishing or using a planarizing plasmaetch-back, as depicted in FIG. 3.

Next as shown in FIG. 3, conventional photolithographic techniques andanisotropic plasma etching are used to etch contact openings 2 areetched in the ILD layer 28 to the source/drain areas 19. To achieve highdevice density it is common practice in the industry to etch thecontacts extending over the shallow trench isolation (STI) 12, commonlyreferred to as borderless contacts. Because of the inherentnonuniformities in the ILD layer 28 across the substrate 10 duringdeposition and the nonuniformities in the etch rate across thesubstrate, it is necessary to over etch in the contact openings 2 toinsure that all contacts are open to the substrate surface.Unfortunately, this results in some of the STI 12 being over etched atthe STI-source/drain interface (X) as depicted in FIG. 3, and results insource/drain-to-substrate shorts when conducting plugs (e.g. tungstenplugs) are formed in the contact openings 2.

Now as shown in FIG. 4, a key feature of this invention is to perform acontact opening ion implantation I/I(N). For the N-channel FET depictedin FIGS. 2-4, the ion implant is of the second conductive type dopant(N-type dopant) and is implanted in the substrate 10 under and adjacentto the over-etched STI regions X. This result in a modified diffusedsource/drain contact 19′ having an extended portion G under and alongside the over-etched STI region I. During implantation of the N-typedopant, a block-out implant photoresist mask is used to protect otherareas from implantation, such as contact openings etched to thesource/drain areas of the P-channel FETs on the same substrate. TheN-type dopant implant is preferably phosphorus (P³¹) ions having animplant dose of between about 5.0 E 12 and 1.0 E 15 atoms/cm² at animplant energy of about 50 KeV. Although the process for making theseimproved borderless contacts is described for N-channel FETs, theprocess is equally applicable to making borderless contacts to P-channelFETs. By using a second photoresist implant block-out masks to preventimplanting in the N-doped contacts one can also implant a P-type dopant,such as Boron (B¹¹), to form an improved borderless contact structurefor the P-channel FETs on the same substrate. The P-type dopant ispreferably boron (B¹¹) and is implanted to a preferred dose of betweenabout 5.0 E 12 and 1.0 E 15 atoms/cm² and at an implant energy of about10 KeV. To simplify the drawings the P-channel FETs are not shown in theFigures.

Continuing with FIG. 4, a second thermal anneal is performed to completethe phase transition of the metal silicide 22 on the source/draincontact areas 19′ and the polysilicon gate electrodes 16, andconcurrently activate the ion implanted contact dopant. The secondthermal anneal is also a rapid thermal anneal (RTA-2) and is carried outin a nitrogen ambient at a temperature of between about 700 and 900degrees centigrade (° C.) and for a time of between about 10 and 50seconds, and more specifically at a temperature of 880° C. for 30seconds for the titanium silicide, and at a temperature of 850° C. for30 seconds for the Co silicide.

By delaying the second rapid thermal anneal (RTA-2) the silicides isconverted to the low resistance silicide phase and, at the same time,electrically activating the contact opening implant dopant I/I-(N) toform an improved source/drain n-p junction 19 structure having a portionG that extends around and under the unavoidable over etch region X inthe STI 12. By delaying the RTA-2 the total thermal budget (temperaturex time) is not increased which is essential for making future shallowjunction FETs. The structure and method is suitable for making deviceswith minimum feature sizes of 0.18 micrometers or less.

Referring to FIG. 5, the borderless contact openings 2 can now be filledwith various conducting material without causing electrical shortsbetween the source/drain 19′ and the substrate 10. One method of formingcontacts is to deposit a refractory metal 30, such as tungsten (W) whichis then etched back or chemically mechanically polished (CMP) back toform metal plugs 30.

EXAMPLE

To better appreciate the advantages of this invention, substrates(commonly referred to as wafer) where fabricated having salicide FETdevice formed by the method of this invention and by the conventionalmethod. The test results are shown the TABLE below. Column 1 is thewafer number, column 2 is the total die tested, col. 3 is number of dietesting good, col. 4 is the functional fails (random single bit fails)and col. 5 is the final test yields in percentage. Normally some of thefails were caused by borderless contact over-etching resulting inelectrical shorts to the substrate. The fails were measured as bit failsof the SRAM cell or by excessive standby currents, where the compliancecurrent is <50 milliamperes (uAmp). The total number of tested die oneach wafer is 250. The wafers 1-6 and 10-11, labeled INV. were processby the method of this invention and the wafer 7-9, labeled CONV receivedthe standard (conventional) process. Each die contains more than 4million N-channel salicide FETs and more than 2.0 million P-channelsalicide FETs. The circuit devices are static random access memory(SRAM) and include about 1.5 million embedded SRAM cells with logic.

TABLE 2 3 4 5 1 TOTAL TESTED FUNCTION FINAL WAFERS \ TESTED GOOD FAILSYIELD 01 INV 250 158 72 65.0 02 INV 250 149 64 62.1 03 INV 250 136 7956.7 04 INV 250 136 88 56.7 05 INV 250 132 89 55.0 06 INV 250 155 6764.6 07 CONV 250  71 144  29.6 08 CONV 250  51 163  21.2 09 CONV 250  79136  32.9 10 INV 250 140 71 58.3 11 INV 250 154 70 64.2

As is clearly seen from the functional fail test (col 4), theconventional process (wafers 7-9) had about twice the failure rate thanthe inventive process (wafer 1-6 and 10-11). The final test yields (col5) also show that the salicide FETs with the improved borderless contactstructure of this invention had a final yield of about 60% while theconventional process had a final yield of less than 30%.

While the invention has been particularly shown and described withreference to the preferred embodiments thereof, it will be understood bythose skilled in the art that various changes in form and details may bemade without departing from the spirit and scope of the invention.

What is claimed is:
 1. A method for fabricating Salicide field effecttransistors with improved borderless contacts openings comprising thesteps of: providing a semiconductor substrate doped with a firstconductive type dopant; forming shallow trench field oxide areas in andon said substrate surrounding and electrically isolating device areas onsaid on said substrate; forming a gate oxide layer on said device areas;depositing a conductively doped polysilicon layer on said substrate andover said device areas; patterning said polysilicon layer to form gateelectrodes over said device areas; forming lightly doped source/drainareas in said device areas adjacent to said gate electrodes by ionimplantation, using a second conductive type dopant; forming insulatingsidewall spacers on the sidewalls of said gate electrodes; formingheavily doped source/drain contact areas in said device areas adjacentto said insulating sidewall spacers by ion implantation a secondconductive type dopant; depositing a conformal metal layer on saidsubstrate over said gate electrodes and said device areas; using a firstthermal anneal to anneal said metal layer and thereby selectivelyforming a silicide layer on said gate electrodes and on saidsource/drain contact areas; selectively etching said remaining unreactedmetal layer and thereby forming said Salicide field effect transistors;depositing a conformal etch stop layer; depositing an interleveldielectric layer; etching said borderless contact openings in saidinterlevel dielectric layer to said source/drain areas and extendingover said field oxide, wherein said etching results in over-etched fieldoxide regions at said field oxide-source/drain area interface; ionimplanting a contact dopant of said second conductive type in saidborderless contact openings and in said substrate under and adjacent tosaid over-etched field oxide regions; using a second thermal anneal tocomplete the phase transition of said metal silicide and concurrentlyactivating said ion implanted contact dopant to form source/draincontact areas that are continuous around said over-etched field oxideregions.
 2. The method of claim 1, wherein said semiconductor substrateis single crystal silicon.
 3. The method of claim 1, wherein shallowtrench isolation is silicon oxide and has a depth of between about 2500and 4500 Angstroms and is coplanar with the surface of said substrate.4. The method of claim 1, wherein said conductively doped polysiliconlayer has a thickness of between about 1000 and 3000 Angstroms.
 5. Themethod of claim 1, wherein said metal layer is titanium and is depositedto a thickness of between about 40 and 400 Angstroms.
 6. The method ofclaim 1, wherein said metal layer is cobalt and is deposited to athickness of between about 40 and 400 Angstroms.
 7. The method of claim1, wherein said unreacted metal is removed in a solution of NH₄OH, H₂O₂and H₂O.
 8. The method of claim 1, wherein said first thermal anneal iscarried out in nitrogen at a temperature of between about 600 and 750degrees centigrade and for a time of between about 10 and 50 seconds. 9.The method of claim 1, wherein said first conductive type dopant is aP-type dopant and said second type dopant is an N-type dopant forSalicide N-channel FETS, and the dopant types are reversed for P-channelsalicide FETs.
 10. The method of claim 1, wherein said second thermalanneal is carried out in nitrogen at a temperature of between about 700and 900 degrees centigrade and 10 for a time of between about 10 and 50seconds.
 11. A method for fabricating Salicide field effect transistorswith improved borderless contacts openings comprising the steps of:providing a semiconductor substrate doped with a first conductive typedopant; forming shallow trench field oxide areas in and on saidsubstrate surrounding and electrically isolating device areas on said onsaid substrate; forming a gate oxide layer on said device areas;depositing a conductively doped polysilicon layer on said substrate andover said device areas; patterning said polysilicon layer to form gateelectrodes over said device areas; forming lightly doped source/drainareas in said device areas adjacent to said gate electrodes by ionimplantation, using a second conductive type dopant; forming insulatingsidewall spacers on the sidewalls of said gate electrodes; formingheavily doped source/drain contact areas in said device areas adjacentto said insulating sidewall spacers by ion implantation a secondconductive type dopant; depositing a conformal titanium metal layer, onsaid substrate over said gate electrodes and said device areas; using afirst thermal anneal to anneal said metal layer and thereby selectivelyforming a titanium silicide layer on said gate electrodes and on saidsource/drain contact areas; selectively etching said remaining unreactedmetal layer and thereby forming said Salicide field effect transistors;depositing a conformal etch stop layer; depositing an interleveldielectric layer; etching said borderless contact openings in saidinterlevel dielectric layer to said source/drain areas and extendingover said field oxide, wherein said etching results in over-etched fieldoxide regions at said field oxide-source/drain area interface; ionimplanting a contact dopant of said second conductive type in saidborderless contact openings and in said substrate under and adjacent tosaid over-etched field oxide regions; using a second thermal anneal tocomplete the phase transition of said metal silicide and concurrentlyactivating the ion implanted contact dopant to form source/drain contactareas that are continuous around said over-etched field oxide regions.12. The method of claim 11, wherein said semiconductor substrate issingle crystal silicon.
 13. The method of claim 11, wherein shallowtrench isolation is silicon oxide and has a depth of between about 2500and 4500 Angstroms and is coplanar with the surface of said substrate.14. The method of claim 11, wherein said conductively doped polysiliconlayer has a thickness of between about 1000 and 3000 Angstroms.
 15. Themethod of claim 11, wherein said metal layer is titanium and isdeposited to a thickness of between about 40 and 400 Angstroms.
 16. Themethod of claim 11, wherein said metal layer is cobalt and is depositedto a thickness of between about 40 and 400 Angstroms.
 17. The method ofclaim 11, wherein said unreacted metal is removed in a solution ofNH₄OH, H₂O₂ and H₂O.
 18. The method of claim 11, wherein said firstthermal anneal is carried out in nitrogen at a temperature of betweenabout 600 and 750 degrees centigrade and for a time of between about 10and 50 seconds.
 19. The method of claim 11, wherein said firstconductive type dopant is a P-type dopant and said second type dopant isan N-type dopant for Salicide N-channel FETS, and the dopant types arereversed for P-channel salicide FETs.
 20. The method of claim 11,wherein said second thermal anneal is carried out in nitrogen at atemperature of between about 700 and 900 degrees centigrade and for atime of between about 10 and 50 seconds.